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MMBT5401HE3-TP

封装/外壳:SOT-23 功率耗散Pd:300mW 晶体管类型:PNP 集电极-发射极最大电压VCEO:-150V 集电极连续电流:-600mA

  • Packaging/Housing:SOT-23
  • Power dissipation Pd:300mW
  • Transistor type:PNP
  • Collector emitter maximum voltage VCEO:-150V
  • Continuous current of collector:-600mA
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