138 2887 4855
Home

LBC856AWT1G

封装/外壳:SOT-323 功率耗散Pd:150mW 晶体管类型:PNP 集电极-发射极最大电压VCEO:-65V 集电极连续电流:-100mA

  • Packaging/Housing:SOT-323
  • Power dissipation Pd:150mW
  • Transistor type:PNP
  • Collector emitter maximum voltage VCEO:-65V
  • Continuous current of collector:-100mA
Online consultation
DESCRIPTION
Product parameters

Service hotline

138 2887 4855

WeChat service account