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S-LBC856BDW1T1G

封装/外壳:SOT-363 功率耗散Pd:380mW 晶体管类型:PNP 集电极-发射极最大电压VCEO:-65V 集电极连续电流:-100mA

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  • Power dissipation Pd:
  • Transistor type:
  • Collector emitter maximum voltage VCEO:
  • Continuous current of collector:
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